r DS(ON) = 44mΩ (Typ.), VGS = 10V, ID = 4.4A Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability.

Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Forme.

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications Di.

FDM3300NZ

FDM-2B

FDM100-0045SP

FDM21-05QC

FDM2452NZ

FDM606P

FDM6296

FDMA0104

FDMA037N08LC

FDMA1023PZ

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