logo
Datasheet4U.com - FDM3622
logo

FDM3622 Datasheet, MOSFET, Fairchild Semiconductor

FDM3622 Datasheet, MOSFET, Fairchild Semiconductor

FDM3622

datasheet Download (Size : 231.19KB)

FDM3622 Datasheet
FDM3622

datasheet Download (Size : 231.19KB)

FDM3622 Datasheet

FDM3622 Features and benefits

FDM3622 Features and benefits

r DS(ON) = 44mΩ (Typ.), VGS = 10V, ID = 4.4A Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability.

FDM3622 Application

FDM3622 Application

Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Forme.

FDM3622 Description

FDM3622 Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications Di.

Image gallery

FDM3622 Page 1 FDM3622 Page 2 FDM3622 Page 3

TAGS

FDM3622
N-Channel
PowerTrench
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

Related datasheet

FDM3300NZ

FDM-2B

FDM100-0045SP

FDM21-05QC

FDM2452NZ

FDM606P

FDM6296

FDMA0104

FDMA037N08LC

FDMA1023PZ

FDMA1024NZ

FDMA1025P

FDMA1027P

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts